Oxygen solubility in boron-containing Ni – Co melts

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

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Chemical diffusivity of boron in melts of haplogranitic composition

A~~~-~erni~ Asiatic of B in synthetic melts of hapl~~tic composition have been measured by the diffusion couple technique at 1 atm between 1200-1600°C. The compositional profiles were measured by ion microprobe and modelled using the Boltzmann-Matano formalism to retrieve compositionally dependent interdiffision coefficients. At the experimental conditions, &OS is found to exchange primarily wi...

The H2O solubility of alkali basaltic melts: an experimental study

Experiments were conducted to determine the water solubility of alkali basalts from Etna, Stromboli and Vesuvius volcanoes, Italy. The basaltic melts were equilibrated at 1,200°C with pure water, under oxidized conditions, and at pressures ranging from 163 to 3,842 bars. Our results show that at pressures above 1 kbar, alkali basalts dissolve more water than typical mid-ocean ridge basalts (MOR...

Ni doping of semiconducting boron carbide

Boron-oxygen luminescence centres in boron-nitrogen systems.

Closed-shell BO(2)(-) and BO(-) anions are proposed as high-efficiency luminescence centres in boron-nitrogen systems, which makes the anions localized and leads to a radiation transition.